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Wenshen Li

Postdoctoral Researcher

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Research Advisor: Prof. Sayeef Salahuddin

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BETR Research Thrust: Millivolt Switches

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Bio

Wenshen Li received the B.S. degree in Microelectronics from Tsinghua University, Beijing, China, in 2015, and Ph.D. degree in Electrical and Computer Engineering from Cornell University in 2020. He is currently a postdoctoral researcher in the University of California, Berkeley. His research interests include advanced power and RF devices. He has published 11 journal papers as the first author. He has won the Honorary mention for Best Student Paper Award in Compound Semiconductor Week, 2018, and the Best Student Presentation Award in 62nd Electronic Materials Conference (EMC) in 2020.

Research

Wenshen Li’s current research is on the design and characterization of negative capacitance (NC) transistors toward ultra-high frequency applications. Specifically, he is applying advance radio-frequency characterization and modeling to understand high-frequency behavior of scaled NC transistors and MOS-capacitors. He is interested in exploring the fundamental limit of MOSFET scaling as well as the hafnia-zirconia material system for capacitance enhancement.

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