break
Electrical pulse-induced ultrafast magnetic switching (Bokor and Salahuddin groups)
Embedded Memory & Spin-Based Logic
break
Jeffrey Bokor, Tsu-Jae King Liu, Ramamoorthy Ramesh, Sayeef Salahuddin, Vladimir Stojanović
break
Large data sets coupled with long network latency result in significant energy inefficiencies in data centers. Processors consume energy mostly in the idle state, waiting for the network to return a data query or maintaining availability to service a remote query into local memory. Disaggregation of processing and memory resources and optimization of the network fabric, enabled by new memory technologies and silicon photonics, can provide for dramatically improved energy efficiency of warehouse-scale computers. The BETR Center research groups of Professors Jeffrey Bokor, Tsu-Jae King Liu, Ramamoorthy Ramesh, Sayeef Salahuddin, and Vladimir Stojanović pursue the goal of high-density non-volatile memory that can be monolithically integrated with CMOS circuitry, such as nanometer-scale magnetic and ferroelectric devices, and nano‐electro‐mechanical switches (NEMS) implemented in a back‐end‐of‐line process. This research involves fundamental scientific studies, to elucidate physical phenomena such as electric-field control of magnetization in multiferroic-ferromagnet heterostructures (for voltage-controlled operation of nanomagnetic memory devices), develop ultrafast (few picoseconds) magnetic devices, as well as the integration of memory+logic fabrication processes and characterization of three-dimensionally integrated circuit structures.
break