Next-Generation Devices

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Electrical pulse-induced ultrafast magnetic switching (Bokor and Salahuddin groups)

Next-Generation Devices

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Jeffrey Bokor, Ali Javey, Tsu-Jae King Liu, Sayeef Salahuddin, Vladimir Stojanović, Eli Yablonovitch

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Recent advancements in cloud computing, social networking, mobile internet and data analytics, and the associated increase of battery-powered electronic systems, will require the development of new intelligent systems with custom properties. In particular, the transition from traditional computing to mobile approaches necessitate logic switches and memory systems that can operate at significantly reduced power consumption and higher speeds. Central to the BETR Center’s research mission is thus the development of next-generation energy-efficient electronic devices and integrated systems. In fact, many of the ultra-low power electronics research projects in the BETR Center have originated in the Center for Energy Efficient Electronics Science (E3S) based on the recognition that the energy used to manipulate a single bit of information is currently ~100,000 times greater than the theoretical limit. Research on next-generation devices and circuits in the BETR Center is conducted by Professors Jeffrey Bokor, Ali Javey, Tsu-Jae King Liu, Sayeef Salahuddin, Vladimir Stojanović, and Eli Yablonovitch, and encompasses the search for new materials and device architectures as alternatives to classical transistor-based digital logic and memory. Examples include new circuit and system architectures leveraging zero-leakage nano-electromechanical (NEM) relays, field effect transistors (FETs) with 2D materials as active layers, graphene nanoribbon transistors, and ultrafast magnetic switches.

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